发明名称 Triple patterning method
摘要 A triple patterning method is provided. The method includes providing a substrate having a first region and a second region; and forming a first material layer. The method also includes forming a second material layer; and forming a plurality of core patterns on the second material layer in the first region. Further, the method includes forming sidewall spacers on side surfaces of the core patterns; and forming first patterns on the first material layer. Further, the method includes forming a third material layer on the first material layer and the first patterns; and forming second patterns on the third material layer in the first region and third patterns on the third material layer in the second region. Further, the method also includes forming fourth patterns; and forming triple patterns on the substrate in the first region and fifth patterns on the substrate in the second region.
申请公布号 US9034762(B2) 申请公布日期 2015.05.19
申请号 US201414188945 申请日期 2014.02.25
申请人 SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION 发明人 Hong Zhongshan
分类号 H01L21/033;H01L21/308;H01L29/02 主分类号 H01L21/033
代理机构 Anova Law Group, PLLC 代理人 Anova Law Group, PLLC
主权项 1. A triple patterning method, comprising: providing a substrate having a first region and a second region; forming a first material layer on the substrate; forming a second material layer on the first material layer; forming a plurality of core patterns on the second material layer in the first region; forming sidewall spacers on side surfaces of the core patterns; forming first patterns on the first material layer by etching the second material layer using the sidewall spacers as an etching mask; forming a third material layer on the first material layer and the first patterns; forming a plurality of second patterns on the third material layer in the first region and a plurality of the third patterns on the third material layer in the second region; forming fourth patterns by etching the third material layer using the second patterns and the third patterns as an etching mask; and forming triple patterns on the substrate in the first region and fifth patterns on the substrate in the second region using the first patterns, the second patterns, the third patterns and the fourth patterns as an etching mask.
地址 Shanghai CN