Trench power MOSFET structure fabrication method

摘要

A trench power MOSFET structure and fabrication method thereof is provided. The fabrication method comprises following process. First, form an isolating trench. Then, form at least two doped regions around the isolating trench. The doped regions are adjacent and the doping concentrations of two doped regions are different. Form an isolating structure in the isolating trench. Wherein, the junction profiles of the two doped regions are made by on implantation method for moderate the electric field distribution and decreasing the conduction loss.

主权项

1. A trench power MOSFET structure fabrication method, comprising:
forming an isolating trench; forming two doped regions around the isolating trench, wherein the two doped regions are adjoining and the doping concentrations of two doped regions are different; and forming an isolating structure in the isolating trench.