SEMICONDUCTOR CIRCUIT DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor circuit device and a semiconductor circuit device, which is a reference voltage circuit device used in the space and which can reduce fluctuation in reference voltage.SOLUTION: A semiconductor circuit device manufacturing method comprises the steps of: manufacturing a reference voltage circuit device composed of a depression MOSFET and an enhancement MOSFET; subsequently measuring a threshold voltage of each of the depression MOSFET and the enhancement MOSFET; subsequently, after exposure to radiation, measuring each a threshold voltage of each of the depression MOSFET and the enhancement MOSFET again; subsequently calculating a fluctuation amount of the threshold voltage of each of the depression MOSFET and the enhancement MOSFET after exposure to radiation; and subsequently manufacturing a reference voltage circuit device having the element size suitable for use in the space based on the fluctuation amount of the threshold voltage.