| 发明名称 |
PULSE PROGRAMMING TECHNIQUES FOR VOLTAGE-CONTROLLED MAGNETORESISTIVE TUNNEL JUNCTION (MTJ) |
| 摘要 |
A method of programming a voltage-controlled magnetoresistive tunnel junction (MTJ) includes applying a programming voltage pulse (Vp), reading the voltage-controlled MTJ, and determining if the voltage-controlled MTJ is programmed to a desired state and if not, changing the Vp and repeating the applying and reading steps until the voltage-controlled MTJ is programmed to the desired state. |
| 申请公布号 |
US2015131369(A9) |
申请公布日期 |
2015.05.14 |
| 申请号 |
US201414214064 |
申请日期 |
2014.03.14 |
| 申请人 |
Avalanche Technology, Inc. |
发明人 |
ABEDIFARD Ebrahim;KESHTBOD Parviz |
| 分类号 |
G11C11/16 |
主分类号 |
G11C11/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of programming a voltage-controlled magnetoresistive tunnel junction (MTJ) comprising:
applying a programming voltage pulse (Vp); reading the voltage-controlled MTJ; determining if the voltage-controlled MTJ is programmed to a desired state and if not, changing the Vp and repeating the applying and reading steps until the voltage-controlled MTJ is programmed to the desired state. |
| 地址 |
Fremont CA US |
