Hydrogen-Free Amorphous Dielectric Insulating Thin Films With No Tunneling States

摘要

A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states is provided. The film is prepared by e-beam deposition of a dielectric material on a substrate having a high substrate temperature Tsub under high vacuum and at a low deposition rate. In an exemplary embodiment, the film is amorphous silicon having a density greater than about 2.18 g/cm3 and a hydrogen content of less than about 0.1%, prepared by e-beam deposition at a rate of about 0.1 nm/sec on a substrate having Tsub=400° C. under a vacuum pressure of 1×10−8 Torr.

主权项

1. A dielectric insulating thin film comprising an amorphous dielectric material having a mass density of at least 90% of a mass density of a crystalline counterpart of the amorphous material and having a hydrogen content of less than about 0.1%, wherein the thin film is substantially free from two-level tunneling states (TLS).