| 摘要 |
An object of the present invention is to provide a connection structure that is able to suppress cracking and peeling in a joint surfaces between a pad part on a substrate (or a lead frame) and a porous metal layer and between a semiconductor element and the porous metal layer. A connection structure (I) for connecting a rear electrode of a semiconductor element to a substrate or a lead frame, wherein a porous metal layer (C) is provided so as to come into contact with at least the rear electrode of the semiconductor element, and the ratio [(B)/(A)] of a porosity of an intermediate portion in the thickness direction of an outer peripheral side part (B) of a region further towards the outside than the cross-section part formed at a position of a distance equivalent to the thickness of the porous metal layer (C) from the side surface toward the inside, to the porosity on the center side (A) after having excluded the outer peripheral side part (B), falls within the range of 1.10 to 1.60. |
