发明名称 |
Circuit structure of test-key and test method thereof |
摘要 |
A circuit structure of a test-key and a test method thereof are provided. The circuit structure comprises a plurality of transistors, a first conductive contact, a plurality of second conductive contacts and a plurality of third conductive contacts. The transistors are arranged in a matrix. The first conductive contact is electrically connected to one source/drain of each transistor in each column of the matrix. Each second conductive contact is electrically connected to the other source/drain of each transistor in a corresponding column of the matrix. Each third conductive contact is electrically connected to the gate of each transistor in a corresponding row of the matrix. In the method, a plurality of driving pulses are provided to the third conductive contacts in sequence, and a plurality of output signals are read from the second conductive contacts to perform an element-character analyzing operation when a row of the transistors is turned on. |
申请公布号 |
US9030221(B2) |
申请公布日期 |
2015.05.12 |
申请号 |
US201113236737 |
申请日期 |
2011.09.20 |
申请人 |
United Microelectronics Corporation |
发明人 |
Tso Ching-Yu |
分类号 |
G01R1/067;H01L21/66;G01R31/27;G01R31/28;G01R31/3185 |
主分类号 |
G01R1/067 |
代理机构 |
WPAT, PC |
代理人 |
WPAT, PC ;King Justin |
主权项 |
1. A test method of a test-key, the circuit structure of the test-key comprising a plurality of transistors, a first conductive contact pad, a plurality of second conductive contact pads and a plurality of third conductive contact pads, the transistors being arranged in a matrix, the first conductive contact pad being electrically coupled to a first source/drain terminal of each of the transistors in each column of the matrix, each of the second conductive contact pads being electrically coupled to a second source/drain terminal of each of the transistors in a corresponding column of the matrix, and each of the third conductive contact pads being electrically coupled to a gate terminal of each of the transistors in a corresponding row of the matrix, the test method comprising:
providing a plurality of driving pulses to the third conductive contact pads respectively according to a predetermined sequence, so as to turn on the transistors row-by-row, wherein the enabling periods of two adjacent driving pulses in time do not overlap; providing a test signal to the first conductive contact pad during a test; and reading out a plurality of output signals as test results from the second conductive contact pads when a row of the transistors is turned on, so as to perform an element-character analyzing operation accordingly. |
地址 |
Hsinchu TW |