Color filter and manufacturing method thereof

摘要

The present invention provides a color filter and a manufacturing method thereof. The method includes steps of: coating a first material layer on a substrate and patterning it to have first photoresists, first filter portions and first spacer portions; coating a second material layer on the substrate and patterning it to have second photoresists, second filter portions and second spacer portions; and coating a third material layer on the substrate and patterning it to have third photoresists, third filter portions and third spacer portions; and the first, the second, the third filter portions are correspondingly overlapped with each other, and the first, the second, the third spacer portions are correspondingly overlapped with each other.

主权项

1. A manufacturing method of a color filter comprising steps of:
providing a substrate; coating a first material layer on the substrate; performing photolithography to the first material layer through a specific mask so as to pattern the first material layer to have multiple first photoresists and multiple first filter portions, wherein each of the first photoresists is connected to one of the first filter portions, and each of the first filter portions includes a first spacer portion formed on and protruding from a top surface of the first filter portion; continuing to coat a second material layer on the substrate; performing photolithography to the second material layer through the specific mask so as to pattern the second material layer to have multiple second photoresists alternately arranged with the first photoresists side by side at intervals and have multiple second filter portions overlapped with the first filter portions, wherein each of the second filter portions includes a second spacer portion formed on and protruding from a top surface of the second filter portion, and the second spacer portion corresponds in position to the first spacer portion; continuing to coat a third material layer; and performing photolithography to the third material layer through the specific mask to pattern the third material layer to have multiple third photoresists alternately arranged with the first photoresists and the second photoresists side by side at intervals and have multiple third filter portions overlapped with the second filter portions, wherein each of the third filter portions includes a third spacer portion formed on and protruding from a top surface of the third filter portion, and the third spacer portion corresponds in position to the second spacer portion; wherein the specific mask includes multiple transparent areas for forming the first, the second and the third photoresists, multiple first half-transparent areas for forming the first, the second and the third filter portions and multiple shielding areas that are alternately arranged with the transparent areas; each of the first half-transparent areas further has a second half-transparent area for forming the first, the second and the third spacer portions; wherein the first, the second and the third filter portions are overlapped with each other and mounted between the first, the second and the third photoresists.