Nitride semiconductor light emitting device

摘要

A nitride semiconductor light emitting device includes a conductive substrate, a first metal layer, a second conductivity-type semiconductor layer, an emission layer, and a first conductivity-type semiconductor layer in this order. The nitride semiconductor light emitting device additionally has an insulating layer covering at least side surfaces of the second conductivity-type semiconductor layer, the emission layer and the first conductivity-type semiconductor layer. A method of manufacturing the same is provided. The nitride semiconductor light emitting device may further include a second metal layer. Thus, a reliable nitride semiconductor light emitting device and a method of manufacturing the same are provided in which short-circuit at the PN junction portion and current leak is reduced as compared with the conventional examples.

主权项

1. A nitride semiconductor light emitting device comprising:
a conductive substrate made of a metal or an alloy, a first metal layer, a second metal layer, a second conductivity-type semiconductor layer, an emission layer, and a first conductivity-type semiconductor layer that are stacked in this order; and an insulating layer, wherein said second conductivity-type semiconductor layer, said emission layer, and said first conductivity-type semiconductor layer form an inversely tapered side surface at an end portion of the device, and said insulating layer covers entire side surfaces of said second metal layer, said second conductivity-type semiconductor layer, said emission layer, and said first conductivity-type semiconductor layer.