| 发明名称 | Magnetic tunnel junction with electronically reflective insulative spacer | ||
| 摘要 | Magnetic tunnel junctions having a specular insulative spacer are disclosed. The magnetic tunnel junction includes a free magnetic layer, a reference magnetic layer, an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference magnetic layer, and an electrically insulating and electronically reflective layer positioned to reflect at least a portion of electrons back into the free magnetic layer. | ||
| 申请公布号 | US9030864(B2) | 申请公布日期 | 2015.05.12 |
| 申请号 | US201213611230 | 申请日期 | 2012.09.12 |
| 申请人 | Seagate Technology LLC | 发明人 | Zheng Yuankai;Dimitrov Dimitar V.;Tian Wei;Wang Dexin;Gao Zheng;Wang Xiaobin |
| 分类号 | G11C11/16 | 主分类号 | G11C11/16 |
| 代理机构 | Mueting, Raasch & Gebhardt, P.A. | 代理人 | Mueting, Raasch & Gebhardt, P.A. |
| 主权项 | 1. A magnetic tunnel junction, comprising: a free magnetic layer; a reference magnetic layer; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference magnetic layer; and an electrically insulating and electronically reflective layer positioned to reflect at least a portion of electrons back into the free magnetic layer, and the electrically insulating and electronically reflective layer has a non-uniform thickness defining peaks and valleys and a plurality of distinct and different thickness values. | ||
| 地址 | Cupertino CA US | ||