Method of forming a photoresist layer

摘要

A method for forming a photoresist layer on a semiconductor device is disclosed. An exemplary includes providing a wafer. The method further includes spinning the wafer during a first cycle at a first speed, while a pre-wet material is dispensed over the wafer and spinning the wafer during the first cycle at a second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer during a second cycle at the first speed, while the pre-wet material continues to be dispensed over the wafer and spinning the wafer during the second cycle at the second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer at a third speed, while a photoresist material is dispensed over the wafer including the pre-wet material.

主权项

1. A method comprising:
providing a wafer; spinning the wafer during a first cycle at a first speed, while a pre-wet material is dispensed over the wafer; spinning the wafer during the first cycle at a second speed, wherein the first speed is greater than the second speed, while the pre-wet material continues to be dispensed over the wafer; spinning the wafer during a second cycle at the first speed, while the pre-wet material continues to be dispensed over the wafer; spinning the wafer during the second cycle at the second speed, while the pre-wet material continues to be dispensed over the wafer; before spinning the wafer at a third speed, spinning the wafer during a third cycle at the first speed, while the pre-wet material continues to be dispensed over the wafer; spinning the wafer during the third cycle at the second speed, while the pre-wet material continues to be dispensed over the wafer; and spinning the wafer at the third speed, wherein the third speed is greater than the first speed, while a photoresist material is dispensed over the wafer including the pre-wet material.