| 摘要 |
The present invention suggests a single poly EEPROM cell which is composed of a flat panel type capacitor (control gate PW-P+P(P+Poly)), a MOS capacitor (Tunnel gate NMOS capacitor), a sense transistor, and a selection transistor. The single poly EEPROM cell according to the present invention according to the present invention uses a Fowler-Nordheim (FN) tunneling method for increasing a recognition distance of an RFID tag chip in the mode. IN a single poly EEPROM memory composed of the single poly EEPROM cell, the single poly EEPROM cell is composed of the flat panel type capacitor (MC1), the MOS capacitor (MC2), the sense transistor (MN1), and the selection transistor (MN2). The sense transistor (MN1) and the selection transistor (MN2) share a P-type well region (PW). |
