Method of manufacturing solid-state image sensor

摘要

A method of manufacturing a solid-state image sensor having a pixel region and a peripheral circuit region, includes forming an oxide film on a semiconductor substrate, forming an insulating film on the oxide film, forming a first opening in the insulating film and the oxide film in the peripheral circuit region, forming a trench in the semiconductor substrate in the peripheral circuit region by etching the semiconductor substrate through the first opening using the insulating film as a mask, forming a second opening in the insulating film to penetrate through the insulating film in the pixel region and to reach a predetermined depth of the oxide film, and forming insulators in the trench and the second opening.

主权项

1. A method of manufacturing a solid-state image sensor having a pixel region and a peripheral circuit region, comprising:
forming an oxide film on a semiconductor substrate; forming an insulating film on the oxide film; forming a first opening in the insulating film and the oxide film in the peripheral circuit region; forming a trench in the semiconductor substrate in the peripheral circuit region by etching the semiconductor substrate through the first opening using the insulating film as a mask; forming a second opening in the insulating film to penetrate through the insulating film in the pixel region and not to penetrate through the oxide film; and forming insulators in the trench and in the second opening after the forming of the trench and the forming of the second opening.