POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

The present invention relates to a power semiconductor device which includes a first semiconductor region of a first conductivity type; a second semiconductor layer of a second conductivity type formed on the upper part of the first semiconductor layer; a third semiconductor layer of a first conductivity type formed on the upper inside of the second semiconductor region; a trench gate which has a shape inserted from the third semiconductor region to the first semiconductor region; and a fourth semiconductor layer of a first conductivity type which is separated from the trench gate and is formed in the lower part of the second semiconductor region.