| 摘要 |
The present invention relates to a semiconductor device and a memory system including the same, and in particular, to a technology which allows to reduce a toggle current of a global input and output line (GIO) in a semiconductor device using data bus inversion (DBI) method. The present invention includes: a local input and output line driving unit which inverts or non-inverts data of a global input and output line according to control signals and then, outputs to the local input and output line; and, an inversion process unit which combines an inverted signal and mat information and outputs a control signal to control whether data is inverted to the local input and output line driving unit. |
