发明名称 METHOD OF FORMATION OF THIN-FILM MICROBRIDGES
摘要 FIELD: electricity.SUBSTANCE: method of formation of thin-film microbridges is offered, according to which the superconductive material is applied on a substrate through a mask, and the mask are plates from refractory materials of pre-set geometry, between edges of plates at the reference fixed temperature Tthe value of the primary fixed gap d, and its geometry, are formed, the size of the secondary gap is calculated, of the obtained dmicrobridge width depending on the final fixed Ttemperature by the formula d=d-{?L(T-T)+?L(T-T)}-?{(L+L+d)(T-T)}, where: L- the distance from the line of fixing of the first plate to the gap, L- the distance from the line of fixing of the second plate to the gap, T- the reference fixed temperature, T- the final fixed temperature, ?- temperature coefficient of thermal expansion of the first refractory plate, ?- thermal expansion coefficient of the second refractory plate, ?- thermal expansion coefficient of the substrate, then the following is performed: heating, a deposition or laser ablation of superconductive material of the fixed duration t and the fixed energy E determining the final fixed temperature T.EFFECT: operation stability improvement.2 cl, 6 dwg, 1 tbl
申请公布号 RU2550749(C1) 申请公布日期 2015.05.10
申请号 RU20130158203 申请日期 2013.12.26
申请人 FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "OMSKIJ GOSUDARSTVENNYJ UNIVERSITET IM. F.M. DOSTOEVSKOGO" 发明人 SEROPJAN GENNADIJ MIKHAJLOVICH;SYCHEV SERGEJ ALEKSANDROVICH;FEDOSOV DENIS VIKTOROVICH;POZYGUN IRINA STANISLAVOVNA;KUZIN ALEKSANDR GENNAD'EVICH
分类号 H01L39/22 主分类号 H01L39/22
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