发明名称 VAPOR DEPOSITION MATERIAL AND METHOD OF PRODUCING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide a vapor deposition material that improves an evaporation rate and prevents the occurrence of splash.SOLUTION: A vapor deposition material comprises metallic silicon, silicon monoxide and silicon dioxide. An atom ratio (O/Si ratio) of metallic silicon and oxygen is 0.95 or more and 1.05 or less, a central particle size of metallic silicon is 5μm or more and 10μm or less, and a central particle size of silicon monoxide is 20μm or more and 200μm or less.</p>
申请公布号 JP2015086423(A) 申请公布日期 2015.05.07
申请号 JP20130224819 申请日期 2013.10.30
申请人 NICHIA CHEM IND LTD 发明人 TANAKA GENTARO;YAMADA SHOICHI;TANAKA SUKEFUMI
分类号 C23C14/24;C04B35/14 主分类号 C23C14/24
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