| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an SOI flash memory. <P>SOLUTION: A vertical MIS field effect transistor comprises: a silicon oxide film 2 formed on a semiconductor substrate 1; a lateral (horizontal) epitaxial Si layer 4 selectively formed on the silicon oxide film 2; a vertical (perpendicular) epitaxial Si layer 5 selectively formed on the Si layer 4, with two opposed lateral faces being insulated; a drain region 8 provided on an upper part of the Si layer 5; a source region 7 formed at a distance from the drain region 8 in an opposed manner on a lower part of the Si layer 5; floating gate electrodes 10 formed on remaining two lateral faces of the Si layer 5 via first gate insulation films 9, respectively; control gate electrodes 12 formed on the lateral faces of the floating gate electrodes 10 via second gate insulation films 11, respectively. A flash memory includes the vertical MIS field effect transistors as memory cells. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
