| 摘要 |
<p>Provided are a highly reliable semiconductor light-emitting element and light-emitting device. The semiconductor light-emitting element has a semiconductor light-emitting layer formed therein, said semiconductor light-emitting layer comprising an n-type semiconductor layer, active layer, and p-type semiconductor layer stacked on a substrate. In the semiconductor light-emitting element, electrodes for connecting to the outside are formed on regions other than the surface region of the p-type semiconductor layer, which constitutes part of the semiconductor light-emitting layer.</p> |
