发明名称 |
FOUR-TERMINAL GATE-CONTROLLED THIN-FILM ORGANIC THYRISTOR |
摘要 |
Technologies are generally described for a four-terminal, gate-controlled, thin-film thyristor device. The thyristor device may essentially be an n-type thin-film transistor (TFT) with an additional emitter terminal. The thyristor device may exhibit an S-shaped negative differential 5 resistance (NDR) characteristic resulting from conductance modulation. The conductance modulation may be caused by formation of a secondary channel for current flow due to an inherent structure of the device. The secondary channel may be formed in a semiconductor area within the device, the semiconductor area including a hole transporting organic semiconductor layer (HTL) and an electron transporting organic semiconductor layer (ETL). A gate terminal of 10 the thyristor device may further allow onset of NDR characteristics to be controlled and may allow the device to be switched off. |
申请公布号 |
WO2015063550(A1) |
申请公布日期 |
2015.05.07 |
申请号 |
WO2013IB61383 |
申请日期 |
2013.12.28 |
申请人 |
INDIAN INSTITUTE OF TECHNOLOGY KANPUR |
发明人 |
MAZHARI, BAQUER;ASHOK, ARJIT |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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