发明名称 |
PIXEL STRUCTURE AND FABRICATION METHOD THEREOF |
摘要 |
A fabrication method of a pixel structure includes the following steps. A first metal layer is patterned to form a source electrode and a drain electrode. A semiconductor material layer is patterned to form a channel layer and a pixel pattern. A first insulation layer is formed to cover the channel layer, the source electrode, the drain electrode and the pixel pattern. A gate electrode is formed on the first insulation layer located above the channel layer. A second insulation layer is formed to cover the gate electrode and the first insulation layer. A pixel opening is formed in the first insulation layer and the second insulation layer to expose a partial region of the pixel pattern. The partial region of the pixel pattern exposed by the pixel opening is modified so as to form a pixel electrode electrically connected to the drain electrode. |
申请公布号 |
US2015123111(A1) |
申请公布日期 |
2015.05.07 |
申请号 |
US201414221262 |
申请日期 |
2014.03.20 |
申请人 |
Au Optronics Corporation |
发明人 |
Tseng Wei-Hao;Chang Fan-Wei;Fang Shou-Wei;Chen Hong-Syu;Lee Jen-Yu;Shih Tsung-Hsiang;Ting Hung-Che |
分类号 |
H01L27/12;H01L29/66;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
1. A fabrication method of a pixel structure, comprising:
forming a semiconductor material layer and a first metal layer subsequently on a substrate; patterning the first metal layer to form a source electrode and a drain electrode, and patterning the semiconductor material layer to form a channel layer and a pixel pattern, wherein the source electrode and the drain electrode are disposed on the channel layer; forming a first insulation layer on the substrate, wherein the first insulation layer covers the channel layer, the source electrode, the drain electrode, and the pixel pattern; forming a gate electrode on the first insulation layer located above the channel layer; forming a second insulation layer on the substrate, wherein the second insulation layer covers the gate electrode and the first insulation layer; forming a pixel opening in the first insulation layer and the second insulation layer, wherein the pixel opening exposes at least one partial region of the pixel pattern; and modifying the at least one partial region of the pixel pattern exposed by the pixel opening so as to form a pixel electrode electrically connected to the drain electrode. |
地址 |
Hsinchu TW |