发明名称 PIXEL STRUCTURE AND FABRICATION METHOD THEREOF
摘要 A fabrication method of a pixel structure includes the following steps. A first metal layer is patterned to form a source electrode and a drain electrode. A semiconductor material layer is patterned to form a channel layer and a pixel pattern. A first insulation layer is formed to cover the channel layer, the source electrode, the drain electrode and the pixel pattern. A gate electrode is formed on the first insulation layer located above the channel layer. A second insulation layer is formed to cover the gate electrode and the first insulation layer. A pixel opening is formed in the first insulation layer and the second insulation layer to expose a partial region of the pixel pattern. The partial region of the pixel pattern exposed by the pixel opening is modified so as to form a pixel electrode electrically connected to the drain electrode.
申请公布号 US2015123111(A1) 申请公布日期 2015.05.07
申请号 US201414221262 申请日期 2014.03.20
申请人 Au Optronics Corporation 发明人 Tseng Wei-Hao;Chang Fan-Wei;Fang Shou-Wei;Chen Hong-Syu;Lee Jen-Yu;Shih Tsung-Hsiang;Ting Hung-Che
分类号 H01L27/12;H01L29/66;H01L29/786 主分类号 H01L27/12
代理机构 代理人
主权项 1. A fabrication method of a pixel structure, comprising: forming a semiconductor material layer and a first metal layer subsequently on a substrate; patterning the first metal layer to form a source electrode and a drain electrode, and patterning the semiconductor material layer to form a channel layer and a pixel pattern, wherein the source electrode and the drain electrode are disposed on the channel layer; forming a first insulation layer on the substrate, wherein the first insulation layer covers the channel layer, the source electrode, the drain electrode, and the pixel pattern; forming a gate electrode on the first insulation layer located above the channel layer; forming a second insulation layer on the substrate, wherein the second insulation layer covers the gate electrode and the first insulation layer; forming a pixel opening in the first insulation layer and the second insulation layer, wherein the pixel opening exposes at least one partial region of the pixel pattern; and modifying the at least one partial region of the pixel pattern exposed by the pixel opening so as to form a pixel electrode electrically connected to the drain electrode.
地址 Hsinchu TW