发明名称 |
GROUP III-V COMPOUND SEMICONDUCTOR NANOWIRE, FIELD EFFECT TRANSISTOR, AND SWITCHING ELEMENT |
摘要 |
The present invention pertains to a group III-V compound semiconductor nanowire able to be used in a group III-V compound semiconductor MOSFET (FET) operational at a small subthreshold (100 mV/dec or less). A side face of the group III-V compound semiconductor nanowire is a (‒110) plane constituted of a very small (111) plane. The group III-V compound semiconductor nanowire has, e.g., a first layer having a (111)A plane as a side face thereof, and a second layer having a (111)B plane as a side face thereof. The first layer and the second layer are stacked alternatingly in the axial direction. |
申请公布号 |
WO2015064094(A1) |
申请公布日期 |
2015.05.07 |
申请号 |
WO2014JP05463 |
申请日期 |
2014.10.29 |
申请人 |
NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY;JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
FUKUI, TAKASHI;TOMIOKA, KATSUHIRO |
分类号 |
H01L29/06;B82Y30/00;H01L21/205;H01L21/336;H01L29/04;H01L29/66;H01L29/78 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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