SILICON-BASED COMPOSITE SUBSTRATE HAVING ACTIVE ZONES SEPARATED BY SILICON-OXIDE-BASED ELECTRICAL INSULATION ZONES

摘要

The invention relates to a silicon-based composite substrate (1) having, in a vertical section plane, active zones (10) of p-doped and/or n-doped silicon, each of the active zones extending through the entire thickness (e) of the substrate, two active zones being separated from one another by at least one electrical insulation zone (20) having a mass content of silicon oxide SiO2 greater than or equal to 50 %. The invention also relates to methods for producing such a composite substrate.