发明名称 LIGHT EMITTING DIODE WITH IMPROVED REFLECTION STRUCTURE AND METHOD FOR FABRICATING THE SAME
摘要 Disclosed is a manufacturing method of a light emitting diode having; a transparent substrate having first and second surfaces; and a compound semiconductor layer which is formed on the first surface and forms one or more light emitting cells. The manufacturing method of the light emitting diode comprises; a step of forming a bonding layer which covers the second surface of the transparent substrate; an etching step of forming one or more groove capable of exposing the transparent substrate partially to penetrate the bonding layer; and a step of forming a reflection layer which is filled in the groove on the bonding layer.
申请公布号 KR20150048099(A) 申请公布日期 2015.05.06
申请号 KR20150053179 申请日期 2015.04.15
申请人 SEOUL VIOSYS CO., LTD. 发明人 KIM, CHANG YEON;KIM, YUN GOO;YOON, YEO JIN;SEO, WON CHEOL
分类号 H01L33/24;H01L33/36 主分类号 H01L33/24
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