发明名称 |
LIGHT EMITTING DIODE WITH IMPROVED REFLECTION STRUCTURE AND METHOD FOR FABRICATING THE SAME |
摘要 |
Disclosed is a manufacturing method of a light emitting diode having; a transparent substrate having first and second surfaces; and a compound semiconductor layer which is formed on the first surface and forms one or more light emitting cells. The manufacturing method of the light emitting diode comprises; a step of forming a bonding layer which covers the second surface of the transparent substrate; an etching step of forming one or more groove capable of exposing the transparent substrate partially to penetrate the bonding layer; and a step of forming a reflection layer which is filled in the groove on the bonding layer. |
申请公布号 |
KR20150048099(A) |
申请公布日期 |
2015.05.06 |
申请号 |
KR20150053179 |
申请日期 |
2015.04.15 |
申请人 |
SEOUL VIOSYS CO., LTD. |
发明人 |
KIM, CHANG YEON;KIM, YUN GOO;YOON, YEO JIN;SEO, WON CHEOL |
分类号 |
H01L33/24;H01L33/36 |
主分类号 |
H01L33/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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