发明名称 3-TERMINAL SYNAPSE DEVICE AND METHOD OF OPERATING THE SAME
摘要 The present invention relates to a 3-terminal synapse device and a method of operating the same. The 3-terminal synapse device includes: a drain layer formed on a substrate; a gate layer formed on the drain layer; a source layer which is vertically stacked on the substrate and faces the drain layer and the gate layer; and first and second vertical insulating layers which are formed between the gate layer and the source layer and have different ion mobility. The first and second vertical insulating layers can cover the drain layer and the side of the gate layer. The ion mobility of the second vertical insulating layer may be higher than that of the first vertical insulating layer.
申请公布号 KR20150047930(A) 申请公布日期 2015.05.06
申请号 KR20130128019 申请日期 2013.10.25
申请人 SAMSUNG ELECTRONICS CO., LTD.;POSTECH ACADEMY-INDUSTRY FOUNDATION 发明人 KIM, YOUNG BAE;HWANG, HYUN SANG
分类号 H01L27/115;H01L21/8247;H01L29/78 主分类号 H01L27/115
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