Resist underlayer film forming composition containing silicon having nitrogen-containing ring

摘要

There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography, includes as a silane compound, a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable organosilane is a hydrolyzable organosilane of Formula (1):
R1aR2bSi(R3)4−(a+b)  Formula (1)wherein R1 is Formula (2):;
in which R4 is an organic group, and R5 is a C1-10 alkylene group, a hydroxyalkylene group, a sulfide bond, an ether bond, an ester bond, or a combination thereof, X1 is Formula (3), Formula (4), or Formula (5):
;
R2 is an organic group, and R3 is a hydrolysable group.

主权项

1. A resist underlayer film forming composition for lithography, comprising a silane compound, wherein the silane compound is a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein
the composition comprises as the hydrolyzable organosilane both (1) a hydrolyzable organosilane of Formula (1), and (2) a hydrolyzable organosilane of Formula (6), and wherein the composition comprises at least the hydrolysis-condensation product of the hydrolyzable organosilane of Formula (1) and the hydrolyzable silane of Formula (6) as a polymer:
R1aR2bSi(R3)4−(a+b)  Formula (1)where R1 is Formula (2): where in Formula (2), R4 is a hydrogen atom, a C1-10 alkyl group, an alkenyl group, an epoxy group, a sulfonyl group, or an organic group containing these groups and containing no Si atoms; R5 is a C1-10 alkylene group, a hydroxyalkylene group, a sulfide bond, an ether bond, an ester bond, or a combination thereof; and X1 is Formula (3), Formula (4), or Formula (5): where in Formula (3), Formula (4), and Formula (5), R6 to R10 are independently a hydrogen atom, a C1-10 alkyl group, an alkenyl group, an epoxy group, a sulfonyl group, or an organic group containing these groups, and R1 is bonded to a silicon atom through a Si—C bond;where R2 is an alkyl group, an aryl group, an aralkyl group, a halogenated alkyl group, a halogenated aryl group, a halogenated aralkyl group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, or a cyano group, or a combination thereof, and is bonded to a silicon atom through a Si—C bond;where R3 is an alkoxy group, an acyloxy group, or a halogen group; andwhere a is an integer of 1 and b is an integer of 0 or 1, and where a+b is an integer of 1 or 2;
R11cSi(R12)4−c  Formula (6)where R11 is an alkyl group, an aryl group, an aralkyl group, a halogenated alkyl group, a halogenated aryl group, a halogenated aralkyl group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, a sulfonyl group, a sulfide bond, an ether bond, an ester bond, a sulfonamide group, or a cyano group, or a combination thereof, and is bonded to a silicon atom through a Si—C bond;where R12 is an alkoxy group, an acyloxy group, or a halogen group; andwhere c is an integer of 0 to 3.