Method of fabricating semiconductor device

摘要

A method of fabricating a semiconductor device includes: forming an epitaxial layer on a semiconductor substrate; forming a capping layer having a first thickness on the epitaxial layer; and oxidizing the capping layer in an oxygen atmosphere to form a first gate dielectric layer having a second thickness.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
providing a semiconductor substrate; forming an epitaxial layer on the semiconductor substrate; forming a capping layer on the epitaxial layer, the capping layer having a first thickness; forming a first gate dielectric layer on the capping layer by performing a thermal chemical vapor deposition (CVD) oxide layer formation method; and oxidizing the capping layer in an atmosphere containing oxygen to form a second gate dielectric layer, the second gate dielectric layer having a second thickness, wherein the epitaxial layer includes silicon (Si) and germanium (Ge), and wherein the first thickness is about half of the second thickness.