| 发明名称 |
INTEGRATED CIRCUIT STRUCTURE WITH METAL CAP AND METHODS OF FABRICATION |
| 摘要 |
The present disclosure generally provides for an integrated circuit (IC) structure with a TSV, and methods of manufacturing the IC structure and the TSV. An IC structure according to embodiments of the present invention may include a through-semiconductor via (TSV) embedded within a substrate, the TSV having an axial end; and a metal cap contacting the axial end of the TSV, wherein the metal cap has a greater electrical resistivity than the TSV. |
| 申请公布号 |
US2015115459(A1) |
申请公布日期 |
2015.04.30 |
| 申请号 |
US201314065451 |
申请日期 |
2013.10.29 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Chen Fen;Kim Andrew T.;Lu Minhua;Sullivan Timothy D.;Wang Ping-Chuan;Zhang Lijuan |
| 分类号 |
H01L23/48;H01L21/768 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit (IC) structure comprising:
a through-semiconductor via (TSV) embedded within a substrate, the TSV having an axial end; and a metal cap contacting the axial end of the TSV, wherein the metal cap has a greater electrical resistivity than the TSV. |
| 地址 |
Armonk NY US |
