| 发明名称 |
RANDOM ACCESS MEMORY AND METHOD OF ADJUSTING READ TIMING THEREOF |
| 摘要 |
A method of adjusting read timing of a random access memory. The method includes providing a Column Address Strobe (CAS) value for defining an CAS latency (CL) of the random access memory; generating a shift margin according to the CAS latency and a reference latency; generating a read command for accessing the random access memory; dynamically generating a Column Select (CS) signal and adjusting output timing of the CS signal according to the shift margin, after the read command is generated. |
| 申请公布号 |
US2015117127(A1) |
申请公布日期 |
2015.04.30 |
| 申请号 |
US201314069289 |
申请日期 |
2013.10.31 |
| 申请人 |
Nanya Technology Cop. |
发明人 |
Wu Shun-Ker |
| 分类号 |
G11C7/22 |
主分类号 |
G11C7/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of adjusting read timing of a random access memory, comprising:
providing a Column Address Strobe (CAS) value for defining a CAS latency (CL) of the random access memory; generating a shift margin according to the CAS latency and a reference latency; generating a read command for accessing the random access memory; dynamically generating a Column Select (CS) signal and adjusting output timing of the CS signal according to the shift margin, after the read command is generated; wherein adjusting output timing of the CS signal is carried out through advancing or delaying the CS signal from a predetermined output time with the shift margin, where the predetermined output time is later than the read command being output. |
| 地址 |
Taoyuan TW |
