发明名称 METHOD OF MANUFACTURING A MASK BLANK AND METHOD OF MANUFACTURING A TRANSFER MASK
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a mask blank, capable of forming a thin film having less foreign matter defects and excellent quality.SOLUTION: The method for manufacturing a mask blank for transfer has a characteristic in the step of forming a thin film by reactive sputtering and includes the step of flying sputtering particles toward the surface to be deposited of a substrate from a target provided in a vacuum chamber to form the thin film. In the step of forming the thin film, the sputtering target consists of a sintered body including metal silicide, and a rare gas component included in sputtering gas is neon, helium or a mixed gas of neon and helium.</p>
申请公布号 SG10201406183V(A) 申请公布日期 2015.04.29
申请号 SG10201406183V 申请日期 2014.09.29
申请人 HOYA CORPORATION;HOYA ELECTRONICS SINGAPORE PTE. LTD. 发明人 TEIICHIRO UMEZAWA;DAISUKE SAKURAI
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