| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can reduce an off-state current of a field-effect transistor formed on an SOI substrate. SOLUTION: The semiconductor device has a silicon layer 450 arranged on an embedded oxide (BOX) layer 451. The method has (a) a process of forming a gate 401 on a part of the silicon layer 450, a process of forming an insulating layer on at least a part of the gate 401 and the silicon layer 450 which is not covered with the gate 401, a process of etching the insulating layer during a first time which is sufficient to etch the insulating layer up to the surface of the silicon layer 450, and a process of etching the silicon layer 450 during a second time longer than the first time. COPYRIGHT: (C)2008,JPO&INPIT
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