| 发明名称 | Dual gate finFET devices | ||
| 摘要 | A device comprises: a first plurality of fins on a semiconductor substrate, the first plurality of fins including a semiconductor material and extending perpendicular from the semiconductor substrate; a second plurality of fins on the semiconductor substrate, the second plurality of fins including a semiconductor material and extending perpendicular from the semiconductor substrate; a chemox layer deposited on lower portions of the fins of the first plurality of fins; and a dielectric layer deposited on the fins of the second plurality of fins. The dielectric layer is thicker than the chemox layer. | ||
| 申请公布号 | US9018686(B2) | 申请公布日期 | 2015.04.28 |
| 申请号 | US201213672925 | 申请日期 | 2012.11.09 |
| 申请人 | International Business Machines Corporation | 发明人 | Basker Veeraraghavan S.;Leobandung Effendi;Yamashita Tenko |
| 分类号 | H01L29/66;H01L21/8234;H01L27/088;H01L29/78 | 主分类号 | H01L29/66 |
| 代理机构 | Harrington & Smith | 代理人 | Harrington & Smith |
| 主权项 | 1. A device, comprising: a first plurality of fins on a semiconductor substrate, the first plurality of fins including a semiconductor material and extending perpendicular from the semiconductor substrate; a second plurality of fins on the semiconductor substrate, the second plurality of fins including a semiconductor material and extending perpendicular from the semiconductor substrate; a chemox layer deposited on lower portions of the fins of the first plurality of fins to a thickness of about 7 Angstroms to about 10 Angstroms; and a dielectric layer deposited on the fins of the second plurality of fins and substantially completely covering the fins to a thickness of about 20 Angstroms to about 50 Angstroms; wherein the dielectric layer is thicker than the chemox layer; and wherein the chemox layer is not deposited on the dielectric layer. | ||
| 地址 | Armonk NY US | ||