Process for manufactuirng super-barrier rectifiers

摘要

A process for manufacturing a semiconductor device, wherein a semiconductor layer is formed on a body of semiconductor material; a first mask is formed on the semiconductor layer; a first conductive region is implanted in the body using the first mask; a second mask is formed laterally and complementarily to the first mask, at least in a projection in a plane parallel to the surface of the body; a second conductive region is implanted in the body using the second mask, in an adjacent and complementary position to the first conductive region; spacers are formed on the sides of the second mask region, to form a third mask aligned to the second mask; and, using the third mask, portions of the semiconductor layer are removed to form a gate region.

主权项

1. A process for manufacturing a semiconductor device, comprising:
forming a semiconductor layer on a surface of a semiconductor body; forming a first mask on the semiconductor layer; forming a first conductive region in the body by introducing a first dopant species into the body using the first mask; forming a second mask laterally and complementarily to the first mask, at least in a projection in a plane parallel to the surface of the body; forming a second conductive region in the body by introducing a second dopant species into the body using the second mask, in an adjacent and complementary position to the first conductive region; forming a third mask aligned to the second mask by forming spacers on sides of the second mask; and forming a gate region by removing portions of the semiconductor layer using the third mask.