Semiconductor memory device and method for manufacturing the same

摘要

A semiconductor memory device according to an embodiment, includes a semiconductor substrate, a first insulating film provided on the semiconductor substrate, a silicon film including silicon provided on the first insulating film, a second insulating film provided on the silicon film, a hafnium alloy-containing film provided on the second insulating film, the hafnium alloy-containing film including oxygen and an alloy of hafnium and a metal other than hafnium, a third insulating film provided on the hafnium alloy-containing film, and an electrode provided on the third insulating film.

主权项

1. A method for manufacturing a semiconductor memory device, comprising:
forming a first insulating film on a semiconductor substrate; forming a silicon film including silicon on the first insulating film; forming a second insulating film on the silicon film; forming a metal film on the second insulating film by depositing a metal other than hafnium; depositing hafnium and oxygen on the metal film; forming a hafnium alloy-containing film by alloying the metal and the hafnium by performing heat treatment; forming a third insulating film on the hafnium alloy-containing film; and forming an electrode on the third insulating film.