PROCESSING METHOD OF SILICON SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a processing method of a silicon substrate capable of easily suppressing lateral spread of an opening of a through-hole due to over-etching even when performing double-side processing onto the silicon substrate to form the through-hole.SOLUTION: A processing method of a silicon substrate includes: a process for preparing a silicon substrate having a first surface and a second surface; a process for forming non-through-hole extended toward the second surface side from the first surface on the silicon substrate; a process for sticking a seal tape having a support member and an adhesive layer to the first surface and filling at least a part of the non-through hole with the adhesive layer; a process for performing reactive ion etching toward the first surface side from the second surface, making the reactive ion etching reach the adhesive layer filled in the non-through-hole to expose the adhesive layer; and a process for stripping the seal tape from the silicon substrate and forming a through-hole through the silicon substrate.