| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a trench gate MOSFET and a manufacturing method of the same, which can easily form narrow-pitch trench grooves.SOLUTION: In a semiconductor device, a thick insulation film 10 is formed on a corner part 8 of a surface of a trench groove 4 by oxidizing a part of a gate electrode 6 filled in the trench groove and a part of a semiconductor substrate surface. The thick insulation film reduces field concentration at a gate electrode lead-out part; and prevents the insulation film at the corner part from leading to insulation breakdown; and shields ion obliquely implanted into a trench lateral face at a transistor part when a source region 3 is formed.</p> |
