发明名称 |
SEMICONDUCTOR DEVICE WITH PATTERNED GROUND SHIELDING |
摘要 |
Semiconductor devices and methods of formation are provided herein. A semiconductor device includes a first inductor, a patterned ground shielding (PGS) proximate the first inductor comprising one or more portions and a first switch configured to couple a first portion of the PGS to a second portion of the PGS. The semiconductor device also has a configuration including a first inductor on a first side of the PGS, a second inductor on a second side of the PGS and a first switch configured to couple a first portion of the PGS to a second portion of the PGS. Selective coupling of portions of the PGS by activating or deactivating switches alters the behavior of the first inductor, or the behavior and interaction between the first inductor and the second inductor. A mechanism is thus provided for selectively configuring a PGS to control inductive or other properties of a circuit. |
申请公布号 |
US2015108603(A1) |
申请公布日期 |
2015.04.23 |
申请号 |
US201314058158 |
申请日期 |
2013.10.18 |
申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
Yen Hsiao-Tsung;Luo Cheng-Wei;Liang Kung-Hao;Kuo Chin-Wei |
分类号 |
H01L23/522;H01L23/60;H01L49/02 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
an inductor; a patterned ground shielding (PGS) proximate the inductor, the PGS comprising a first portion and a second portion; and a switch for electrically coupling the first portion of the PGS to the second portion of the PGS. |
地址 |
Hsin-Chu TW |