发明名称 DATA STORAGE FLASH MEMORY MANAGEMENT METHOD AND PROGRAM
摘要 There is provided a data storage flash memory management method that does not require a management area and can reduce an access load. A data storage flash memory management method for storing k time-varying parameters (k is a positive integer) in a flash memory including j blocks (j is an even number not less than 2) as erase units is configured as follows. The j blocks are divided into two areas which are a primary macroblock and a secondary macroblock, each including j/2 blocks. Each of the primary macroblock and the secondary macroblock is divided into k or more segments each having an equal memory capacity, with one of the macroblocks as an active system and the other as a standby system. The k parameters are one-to-one associated with k segments of the k or more segments, and each parameter is written or read to/from a corresponding segment in an active-system macroblock.
申请公布号 US2015113210(A1) 申请公布日期 2015.04.23
申请号 US201414509142 申请日期 2014.10.08
申请人 Renesas Electronics Corporation 发明人 SUZUKI Shinichi;YAMAUCHI Ryosuke
分类号 G06F12/02 主分类号 G06F12/02
代理机构 代理人
主权项 1. A data storage flash memory management method for storing k varying parameters (k is a positive integer) in a flash memory including j blocks (j is an even number not less than 2) as erase units, the method comprising the steps of: dividing the j blocks into two areas which are a primary macroblock and a secondary macroblock, each comprising j/2 blocks; dividing each of the primary macroblock and the secondary macroblock into k or more segments each having an equal memory capacity, with one of the macroblocks as an active system and the other as a standby system; one-to-one associating the k parameters with k segments of the k or more segments; and writing or reading each parameter to/from a corresponding segment in an active-system macroblock.
地址 Kawasaki-shi JP