METHOD OF MAKING BACKSIDE ILLUMINATED IMAGE SENSORS

摘要

A method of making a backside illuminated image sensor includes forming a first isolation structure in a pixel region of a substrate, where a bottom of the first isolation structure is exposed at a back surface of the substrate. The method further includes forming a second isolation structure in a peripheral region of the substrate, where the second isolation structure has a depth less than a depth of the first isolation structure. Additionally, the method includes forming an implant region adjacent to at least a portion of sidewalls of the first isolation structure, where the portion of the sidewalls is located closer to the back surface than a front surface of the substrate, and where the second isolation structure is free of the implant region.

主权项

1. A method of making a backside illuminated image sensor, the method comprising:
forming a first isolation structure in a pixel region of a substrate, wherein a bottom of the first isolation structure is exposed at a back surface of the substrate; forming a second isolation structure in a peripheral region of the substrate, wherein the second isolation structure has a depth less than a depth of the first isolation structure; and forming an implant region adjacent to at least a portion of sidewalls of the first isolation structure, wherein the portion of the sidewalls is located closer to the back surface than a front surface of the substrate, wherein the second isolation structure is free of the implant region.