| 摘要 |
An optoelectronic semiconductor component (10) is described, comprising a layer stack based on a nitride compound semiconductor and having an n-type semiconductor region (6), a p-type semiconductor region (8) and an active layer (7) arranged between the n-type semiconductor region (6) and the p-type semiconductor region (8). In order to form an electron barrier, the p-type semiconductor region (8) comprises a layer sequence (13) having a plurality of p-doped layers (1, 2, 3, 4) composed of AlXInyGa1-x-yN where 0 ≤ x ≤ 1, 0 ≤ y ≤ 1 and x + y ≤ 1, wherein the layer sequence (13) comprises a first p-doped layer (1) having an aluminum proportion x1 ≥ 0.5 and a thickness of not more than 3 nm, and the first p-doped layer (1), at a side facing away from the active layer (7), is succeeded by at least a second p-doped layer (2) having an aluminum proportion x2 < x1 and a third p-doped layer (3) having an aluminum proportion x3 < x2. |
