发明名称 METAL WIRING LAYER FORMING METHOD, METAL WIRING LAYER FORMING APPARATUS, AND STORAGE MEDIUM
摘要 PROBLEM TO BE SOLVED: To provide a metal wiring layer forming method in which a metal wiring layer can be formed within a recess of a substrate and in which the metal wiring layer within the recess is not formed on the outside of the recess.SOLUTION: A metal wiring layer forming method includes the steps of: forming a catalyst layer 5 composed of Pd on a tungsten layer W provided on a bottom surface 3a of a recess 3 of a substrate 2 and not forming the catalyst layer 5 on a surface 3b of an insulation layer of the recess 3; and forming an Ni-based metal wiring layer 7 on the catalyst layer 5 of the recess 3.
申请公布号 JP2015079885(A) 申请公布日期 2015.04.23
申请号 JP20130216745 申请日期 2013.10.17
申请人 TOKYO ELECTRON LTD 发明人 TANAKA TAKASHI;MIZUTANI NOBUTAKA;IWASHITA MITSUAKI
分类号 H01L21/288;C23C18/18;C23C18/32;H01L21/768;H01L23/522 主分类号 H01L21/288
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