发明名称 |
METAL WIRING LAYER FORMING METHOD, METAL WIRING LAYER FORMING APPARATUS, AND STORAGE MEDIUM |
摘要 |
PROBLEM TO BE SOLVED: To provide a metal wiring layer forming method in which a metal wiring layer can be formed within a recess of a substrate and in which the metal wiring layer within the recess is not formed on the outside of the recess.SOLUTION: A metal wiring layer forming method includes the steps of: forming a catalyst layer 5 composed of Pd on a tungsten layer W provided on a bottom surface 3a of a recess 3 of a substrate 2 and not forming the catalyst layer 5 on a surface 3b of an insulation layer of the recess 3; and forming an Ni-based metal wiring layer 7 on the catalyst layer 5 of the recess 3. |
申请公布号 |
JP2015079885(A) |
申请公布日期 |
2015.04.23 |
申请号 |
JP20130216745 |
申请日期 |
2013.10.17 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
TANAKA TAKASHI;MIZUTANI NOBUTAKA;IWASHITA MITSUAKI |
分类号 |
H01L21/288;C23C18/18;C23C18/32;H01L21/768;H01L23/522 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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