Integrated circuit device having through-silicon via structure and method of manufacturing the same

摘要

An integrated circuit device comprises: a plurality of first wiring layers formed at different levels on a first area on a substrate; a first multi-layer wiring structure having a plurality of first contact plugs connecting to the plurality of first wiring layers; a first pad layer formed at the same levels as one or more first wiring layers among the plurality of first wiring layers on a second area on the substrate; a TSV landing pad having a second pad layer formed at the same levels as one or more first contact plugs among the plurality of first contact plugs on the first pad layer; a second multi-layer wiring structure formed on the TSV landing pad; and a TSV structure that penetrates the substrate and connects to the second multi-layer wiring structure through the TSV landing pad.