| 摘要 |
<p>A semiconductor device manufacturing method includes forming a transistor over a semiconductor substrate; forming a first silicon nitride film covering the transistor over the semiconductor substrate; supplying a NH4F radical to the first silicon nitride film; making thermal processing on the first silicon nitride film after the supplying the NH4F radical; and forming a second silicon nitride film over the first silicon nitride film after the thermal processing.</p> |
