| 摘要 |
994,212. Semi-conductor devices. ASSOCIATED SEMICONDUCTOR MANUFACTURERS Ltd. July 26, 1961 [Aug. 2, 1960], No. 26726/60. Heading H1K. The base of a semi-conductor device is treated so as to provide a continuous transition of the order 1000 Angstroms thick in which the energy gap is wider than in the interior of the base material. The treatment isolates inherently unstable surface phenomena which adversely affect the device. The base material may be silicon or germanium or any intermetallic compound of the two metals, one from Group III and the other from Group V in single crystal form. When the base is of germanium it may be sputtered with silicon and heated to diffuse the silicon into the surface of the base. A silicon-indium alloy may be introduced to form the layer. The layer may also be provided by forming a chemical compound with the surface material of the base, the compound being a semi-conductor or insulator with a crystal structure that fits the structure of the base material to provide the wider energy gap. |
