| 摘要 |
1,004,396. Semi-conductor devices. SPERRY RAND CORPORATION. May 22, 1964 [June 4, 1963], No. 21289/64. Heading H1K. A thin-film controlled-emission amplifier comprises an insulating film 10 (Fig. 1) or 22 (Fig. 3) deposited on a metal film 14 or 21, with two further metal films 11 and 12, or 24 and 26, deposited on adjacent but separated areas of the insulating film. The adjacent edges of the two further metal films are separated by insulating material which may be integral with the insulating film 10 (Fig. 1) or may be provided by a second insulating film 25 (Fig. 3) which is preferably made self-healing by means of a further insulating film 27 which reacts with the metal of the film 24 to form an insulating compound. In this construction the metal film 26 and the insulating films 25 and 27 extend through a pinhole 23 in the metal film 24 to make contact with the insulating film 22 where it covers an edge 21c of the first metal film 21. |
