发明名称 半導体装置
摘要 To solve a problem in that an antenna or a circuit including a thin film transistor is damaged due to discharge of electric charge accumulated in an insulator (a problem of electrostatic discharge), a semiconductor device includes a first insulator, a circuit including a thin film transistor provided over the first insulator, an antenna which is provided over the circuit and is electrically connected to the circuit, and a second insulator provided over the antenna, a first conductive film provided between the first insulator and the circuit, and a second conductive film provided between the second insulator and the antenna.
申请公布号 JP5706549(B2) 申请公布日期 2015.04.22
申请号 JP20140004772 申请日期 2014.01.15
申请人 株式会社半導体エネルギー研究所 发明人 及川 欣聡;江口 晋吾
分类号 H01L21/822;H01L21/28;H01L21/336;H01L27/04;H01L29/423;H01L29/786 主分类号 H01L21/822
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