发明名称 Method for observing sample and electronic microscope
摘要 A sample observation method of the present invention comprises a step of defining, with respect to an electron microscope image, an outline of an observation object with respect to a sample (3), or a plurality of points located along the outline, and a step of arranging a plurality of fields of view for an electron microscope along the outline, wherein electron microscope images of the plurality of fields of view that have been defined and arranged along the shape of the observation object through each of the above-mentioned steps are acquired. It is thus made possible to provide a sample observation method that is capable of selectively acquiring, with respect to observation objects of various shapes, an electron microscope image based on a field of view definition that is in accordance with the shape of the observation object, as well as an electron microscope apparatus that realizes such a sample observation method.
申请公布号 US9013572(B2) 申请公布日期 2015.04.21
申请号 US200913126638 申请日期 2009.10.19
申请人 Hitachi High-Technologies Corporation 发明人 Fujisawa Akiko;Kobayashi Hiroyuki;Nakazawa Eiko
分类号 G06K9/00;H04N7/18;H01J37/28;H01J37/22 主分类号 G06K9/00
代理机构 McDermott Will & Emery LLP 代理人 McDermott Will & Emery LLP
主权项 1. A sample observation method in which a region is defined from a first image obtained with an electron microscope, an image of greater magnification than the first image being acquired in the region, and in which a sample is observed using a second image obtained based on the defined region, the sample observation method comprising: a step of specifying, in the first image, an outline, or a plurality or points located along the outline, with respect to an object of observation; and a step of arranging, along the outline, a plurality of fields of view for acquiring the second image in such a manner that there is an overlap between parts of the plurality of fields of view, wherein: movement between the plurality of fields of view is performed using a sample stage or a deflector that deflects an electron beam, a distance between the fields of view is adjusted in accordance with an overlap amount between the fields of view, and adjustment of the distance between the fields of view is performed when distance d between the fields of view is equal to or less than (N−ΔN)/(M′/M), where N: number of imaged pixels,ΔN: overlap amount of field of view,M′: magnification of second image, andM: magnification of first image.
地址 Tokyo JP