Nonvolatile semiconductor memory device and producing method thereof

摘要

A cell array includes a memory cell region in which memory cells are formed and a peripheral region that is provided around the memory cell region. In the memory cell region, first lines are extended in parallel with a first direction, and the first lines are repeatedly formed at first intervals in a second direction orthogonal to the first direction. In the peripheral region, each of the first lines located at (4n−3)-th (n is a positive integer) and (4n−2)-th positions in the second direction from a predetermined position has a contact connecting portion on one end side in the first direction of the first line. In the peripheral region, each of the first lines located at (4n−1)-th and 4n-th positions in the second direction from the predetermined position has the contact connecting portion on the other end side in the first direction of the first line. The contact connecting portion is formed so as to contact a contact plug extended in a laminating direction.

主权项

1. A nonvolatile semiconductor memory device comprising:
a semiconductor substrate; and a cell array formed onabove the semiconductor substrate, including a plurality of first lines, a plurality of second lines intersecting the plurality of first lines, and a plurality of memory cells connected at intersections of the first and second lines between both lines, wherein the cell array includes: a memory cell region where the memory cells are formeddisposed; and a peripheral region that is provided around the memory cell region, in the memory cell region, the first lines are extended in parallel with a first direction, and the first lines are repeatedly formed at first intervals in a second direction orthogonal to the first direction, and the second lines are extended in parallel with the second direction, in the peripheral region, each of the first lines located at (4n−3)-th (n is a positive integer) and (4n−2)-th positions in the second direction from a predetermined position hashave a contact connecting portion on one end side in the first direction of the first line, in the peripheral region, each of the first lines located at (4n−1)-th and 4n-th positions in the second direction from the predetermined position hashave the contact connecting portion on the other end side in the first direction of the first line, and the contact connecting portion is formed so as to contact with a contact plug extended in a laminating direction orthogonal to both of the first direction and the second direction.