发明名称 Through wire interconnect (TWI) for semiconductor components having wire in via and bonded connection with substrate contact
摘要 A through wire interconnect for a semiconductor substrate includes a via extending through the semiconductor substrate from the first side to the second side thereof; a wire in the via having a first end with a bonded connection to the substrate contact and a second end proximate to the second side of the semiconductor substrate; a dielectric material in the via configured to electrically insulate the wire from the semiconductor substrate; a bonding member bonded to the first end of the wire and to the substrate contact configured to secure the wire to the substrate contact; and a contact on the second end of the wire.
申请公布号 US9013044(B2) 申请公布日期 2015.04.21
申请号 US201313945392 申请日期 2013.07.18
申请人 Micron Technology, Inc. 发明人 Wood Alan G;Hembree David R
分类号 H01L23/48;H01L23/52;H01L23/00;H01L23/31;H01L25/065;H01L21/683;H01L23/498 主分类号 H01L23/48
代理机构 代理人 Gratton Stephen A.
主权项 1. A through wire interconnect for a semiconductor substrate having a first side, a second side, a substrate contact on the first side, and an integrated circuit in electrical communication with the substrate contact comprising: an electrically insulated via extending through the semiconductor substrate from the first side to the second side thereof; and a wire in the via electrically insulated from the semiconductor substrate having a first end with a bonded connection to the substrate contact and a second end proximate to the second side of the semiconductor substrate with a contact thereon.
地址 Boise ID US