发明名称 |
Through wire interconnect (TWI) for semiconductor components having wire in via and bonded connection with substrate contact |
摘要 |
A through wire interconnect for a semiconductor substrate includes a via extending through the semiconductor substrate from the first side to the second side thereof; a wire in the via having a first end with a bonded connection to the substrate contact and a second end proximate to the second side of the semiconductor substrate; a dielectric material in the via configured to electrically insulate the wire from the semiconductor substrate; a bonding member bonded to the first end of the wire and to the substrate contact configured to secure the wire to the substrate contact; and a contact on the second end of the wire. |
申请公布号 |
US9013044(B2) |
申请公布日期 |
2015.04.21 |
申请号 |
US201313945392 |
申请日期 |
2013.07.18 |
申请人 |
Micron Technology, Inc. |
发明人 |
Wood Alan G;Hembree David R |
分类号 |
H01L23/48;H01L23/52;H01L23/00;H01L23/31;H01L25/065;H01L21/683;H01L23/498 |
主分类号 |
H01L23/48 |
代理机构 |
|
代理人 |
Gratton Stephen A. |
主权项 |
1. A through wire interconnect for a semiconductor substrate having a first side, a second side, a substrate contact on the first side, and an integrated circuit in electrical communication with the substrate contact comprising:
an electrically insulated via extending through the semiconductor substrate from the first side to the second side thereof; and a wire in the via electrically insulated from the semiconductor substrate having a first end with a bonded connection to the substrate contact and a second end proximate to the second side of the semiconductor substrate with a contact thereon. |
地址 |
Boise ID US |