发明名称 SEMICONDUCTOR ELEMENT AND DIODE
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor element having a lower resistance between source and drain electrodes and a semiconductor layer, compared with the conventional art.SOLUTION: A semiconductor element having a substrate, a first electrode, a second electrode, a third electrode, and a semiconductor layer, includes such a structure that the substrate, the first electrode, and the third electrode are arranged in this order in a thickness direction of the substrate. The semiconductor layer is present between the first electrode and the third electrode. An electride layer constituted of a thin film of an amorphous oxide electride containing calcium atoms and aluminum atoms is provided between any one of or both of the first electrode and the third electrode, and the semiconductor layer.</p>
申请公布号 JP2015076540(A) 申请公布日期 2015.04.20
申请号 JP20130212569 申请日期 2013.10.10
申请人 ASAHI GLASS CO LTD 发明人 WATANABE TOSHINARI;MIYAGAWA NAOMICHI;ITO KAZUHIRO;WATANABE AKIRA;MITSUI AKIRA
分类号 H01L21/28;H01L21/316;H01L21/337;H01L21/338;H01L21/822;H01L27/04;H01L29/06;H01L29/47;H01L29/786;H01L29/808;H01L29/812;H01L29/861;H01L29/868;H01L29/872;H01L51/05 主分类号 H01L21/28
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