摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor element having a lower resistance between source and drain electrodes and a semiconductor layer, compared with the conventional art.SOLUTION: A semiconductor element having a substrate, a first electrode, a second electrode, a third electrode, and a semiconductor layer, includes such a structure that the substrate, the first electrode, and the third electrode are arranged in this order in a thickness direction of the substrate. The semiconductor layer is present between the first electrode and the third electrode. An electride layer constituted of a thin film of an amorphous oxide electride containing calcium atoms and aluminum atoms is provided between any one of or both of the first electrode and the third electrode, and the semiconductor layer.</p> |